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IXTM40N30 - Power MOSFET

Download the IXTM40N30 datasheet PDF. This datasheet also covers the IXTH35N30 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l International standard packages Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH35N30_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTM40N30 N-Channel MOSFET INCHANGE
IXTM11N80 N-Channel MOSFET INCHANGE
IXTM11N80 Power MOSFET IXYS
IXTM12N90 N-Channel MOSFET INCHANGE
IXTM13N80 Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTM10N100 MOSFET
IXTM12N100 MOSFET
IXTM21N50 MOSFET
IXTM24N50 MOSFET
IXTM50N20 MegaMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0.10 Ω 0.085 Ω 0.088 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 35N30 40N30 35N30 40N30 Maximum Ratings 300 300 ±20 ±30 35 40 140 160 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Features l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.