IXTK180N15 mosfet equivalent, power mosfet.
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
300 0.7/6 10
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Interna.
Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 mA V DS.
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