IXTK180N15
Features
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
300 0.7/6 10
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- International standard package
- Fast switching times
Applications
Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 m A V DS = VGS, ID = 250 µA V GS = ±20 V DC, VDS = 0 V DS = VDSS V GS = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 150 2.0 4.0 ±200 V V n A
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- Motor controls DC choppers Switched-mode power supplies
Advantages
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- 50 µA 3 m A 10 m Ω
Easy to mount with one screw (isolated mounting screw hole) Space savings High power density
V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
© 2002 IXYS All rights reserved
98878A (02/02)
IXTK 180N15
Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK 0.15 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5...
