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IXTK140N20P - Power MOSFET

Key Features

  • l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99194E(12/05) IXTK 140N20P Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VDS= 10 V; ID = 0.5 ID25, pulse test 50 84 S VGS = 0 V, VDS = 25.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHTTM Power MOSFET IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated VDSS = 200 V ID25 = 140 A ≤RDS(on) 18 mΩ Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 200 V 200 V ±20 V ±30 V 140 A 75 A 280 A 60 A 100 mJ 4J 10 V/ns 800 W -55 ... +175 175 -55 ... +150 °C °C °C 300 ° C 260 ° C 1.13/10 Nm/lb.in.