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IXTH6N90 - Standard Power MOSFET

Features

  • l l l l l International standard packages Low RDS (on).

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Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 900 900 ±20 ±30 6 24 180 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.