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IXTH50N20 Datasheet, IXYS Corporation

IXTH50N20 fet equivalent, megamos fet.

IXTH50N20 Avg. rating / M : 1.0 rating-12

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IXTH50N20 Datasheet

Features and benefits

l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to pro.

Application

l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
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Image gallery

IXTH50N20 Page 1 IXTH50N20 Page 2 IXTH50N20 Page 3

TAGS

IXTH50N20
MegaMOS
FET
IXYS Corporation

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