IXTA3N50P Datasheet - IXYS Corporation

IXTA3N50P Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY3N50P IXTA3N50P IXTP3N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 8 3 180 10 70 -55 +150 150 -55 +150 A A A mJ V/ns W C C C Ma.

IXTA3N50P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplies

IXTA3N50P Datasheet (312.83 KB)

IXTA3N50P Datasheet Preview — Preview of IXTA3N50P PDF

Datasheet Details

Part number:

IXTA3N50P

Manufacturer:

IXYS Corporation

File Size:

312.83 KB

Description:

Power mosfet.

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IXTA3N50P Power MOSFET IXYS Corporation

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