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Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
Combi Pack
IXGH 12N100U1 IXGH 12N100AU1
VCES
I V C25
CE(sat)
1000 V 24 A 3.5 V 1000 V 24 A 4.0 V
Symbol
Test Conditions
VCES VCGR
VGES VGEM
I
C25
I
C90
ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW
Continuous Transient
T C
= 25°C
T C
= 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH
PC
TC = 25°C
TJ TJM Tstg
Md Weight
Mounting torque with screw M3
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
24
A
12
A
48
A
ICM = 24
A
@ 0.8 VCES
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
IXGH12N100U1 Datasheet
