IXGH10N60, IXGA10N60 Datasheet - IXYS Corporation

IXGH10N60 High speed IGBT

www.DataSheet4U.com Preliminary data Low VCE(sat) IGBT High speed IGBT VCES IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V IC25 20 A 20 A VCE(sat) 2.5 V 3.0 V TO-220AB(IXGP) Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH TC = 25 °C Maximum Ratings 600 600 ±20 .

IXGH10N60 Features

* l International standard packages JEDEC TO-263 AA surface mountable and JEDEC TO-247 AD l 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and rob

IXGH10N60, IXGA10N60 Datasheet