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IXFV26N50PS, IXFH26N50P Datasheet - IXYS Corporation

IXFV26N50PS Avalanche Rated Fast Instrinsic Diode

PolarHVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet www.DataSheet4U.com IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 trr RDS(on) = = ≤ ≤ 500 V 26 A 230 mΩ 200 ns Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuos Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 26 78 26 4.

IXFV26N50PS Features

* z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 I

IXFV26N50PS, IXFH26N50P Datasheet

This datasheet PDF includes multiple part numbers: IXFV26N50PS, IXFH26N50P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXFV26N50PS, IXFH26N50P

Manufacturer:

IXYS Corporation

File Size:

243.62 KB

Description:

Avalanche rated fast instrinsic diode.

This datasheet PDF includes multiple part numbers: IXFV26N50PS, IXFH26N50P.
Please refer to the document for exact specifications by model.

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IXFV26N50PS IXFH26N50P Avalanche Rated Fast Instrinsic Diode IXYS Corporation

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