l l l 1.13/10 Nm/lb.in. 6 4 g g l l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance .

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100.

IXFT60N20

IXFT60N25Q

IXFT60N50P3

IXFT60N65X2HV

IXFT66N20Q

IXFT68N20

IXFT6N100F

IXFT10N100

IXFT120N15P

IXFT12N100

IXFT12N100F

IXFT12N50F

IXFT13N100

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