• Part: IXFT58N20Q
  • Description: HiPerFET Power MOSFETs
  • Manufacturer: IXYS
  • Size: 294.70 KB
Download IXFT58N20Q Datasheet PDF
IXFT58N20Q page 2
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Datasheet Summary

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg .. Preliminary data sheet IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS(on) = 200 V = 58 A = 40 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 58 232 58 30 1.0 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C g g TO-268 (D3) (IXFT) Case...