Download the IXFT18N100Q3 datasheet PDF.
This datasheet also covers the IXFH18N100Q3 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Features
- Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
300 260 1.13 / 10 4.0 6.0
Advantages
z z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max.