z 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 250 2500 5 z z z z Weight z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - .

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V z z z z V.

IXFR50N50

IXFR55N50

IXFR55N50F

IXFR100N25

IXFR102N30P

IXFR10N100F

IXFR10N100Q

IXFR120N20

IXFR120N25P

IXFR12N100F

IXFR12N100Q

IXFR140N20P

IXFR14N100Q2

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