IXFP8N50PM Datasheet - IXYS Corporation

IXFP8N50PM Power MOSFET

Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP 8N50PM VDSS ID25 trr RDS(on) = 500 V = 4.4 A ≤ 0.8 Ω ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md www.DataSheet4U.net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 2.

IXFP8N50PM Features

* l 1.13/10 Nm/lb.in. 4 g l l Weight l Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 500 0.

IXFP8N50PM Datasheet (125.18 KB)