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IXFN34N100 - Power MOSFET

Key Features

  • • International standard packages isolation • miniBLOC, with Aluminium nitride • Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 VDSS ID25 RDS(on) = 1000V = 34A = 0.28W D G S S Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ£ 150°C, RG = 2 W TC= 25°C Maximum Ratings 1000 1000 ± 20 ± 30 34 136 34 64 4 5 700 -55 ... +150 150 -55 ...