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IXFH12N100P Datasheet, IXYS Corporation

IXFH12N100P mosfets equivalent, polar hiperfet power mosfets.

IXFH12N100P Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 192.24KB)

IXFH12N100P Datasheet

Features and benefits

z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVD.

Application

z z z z High Power Density Easy to Mount Space Savings 20 μA 1.0 mA 1.05 Ω z z z z VGS = 10V, ID = 0.5
* ID25, N.

Image gallery

IXFH12N100P Page 1 IXFH12N100P Page 2 IXFH12N100P Page 3

TAGS

IXFH12N100P
Polar
HiPerFET
Power
MOSFETs
IXYS Corporation

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