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IXDP20N60B - High Voltage IGBT

Key Features

  • VCES VCGR VGES TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous 600 V.
  • NPT IGBT technology 600 V.
  • low switching losses.
  • low tail current ±20 V.
  • no latch up VGEM IC25 Transient TC = 25°C ±30 V.
  • short circuit capability 32 A.
  • positive temperature coefficient for easy paralleling IC90 TC = 90°C 20 A.
  • MOS input, voltage controlled ICM TC = 90°C, tp =1 ms 40 A.
  • optional ultra fast diode.
  • International standard package.

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Full PDF Text Transcription (Reference)

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IXDP20N60B High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage Replacement IXYP20N65B3 VCES = 600 V IC25 = 32 A V = CE(sat) typ 2.