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ITXP1R6N50P - PolarHV Power MOSFET

Features

  • z Md Weight 1.13/10 Nm/lb. in. 0.8 4 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 50 6.5 V V nA µA µA Ω Advantages z z z Easy to mount Space savings H.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
ITXY1R6N50P PolarHV Power MOSFET

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Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTP 1R6N50P IXTY 1R6N50P VDSS ID25 RDS(on) = 500 = 1.6 ≤ 6.5 V A Ω www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 50 Ω TC = 25°C Maximum Ratings TO-252 (IXTY) 500 500 ± 30 ± 40 1.6 2.5 1.6 5 75 10 43 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns G G S (TAB) TAB TO-220 (IXTP) W °C °C °C °C °C D S (TAB) D = Drain TAB = Drain G = Gate S = Source 1.6 mm (0.062 in.
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