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DSEC30-04A - HiPerFRED Epitaxial Diode

Key Features

  • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 95 0.81.2 6.
  • Symbol IR ① Conditions TVJ = 25°C; TVJ = 150°C; IF = 15 A; VR = VRRM VR = VRRM TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 1.06 1.47 1.6 0.25 µA mA V V K/W K/W ns 6.3 A.
  • VF ② RthJC RthCH.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information DSEC 30-04A www.DataSheet4U.com HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 400 V trr = 30 ns TO-247 AD VRSM V 400 VRRM V 400 Type DSEC 30-04A A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 145°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = tbd A; L = tbd µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 15 tbd tbd tbd -55...+175 175 -55...