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IXYS Corporation

DSA35-12A Datasheet Preview

DSA35-12A Datasheet

Rectifier Diode Avalanche Diode

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Rectifier Diode
Avalanche Diode
DS 35
DSA 35
DSI 35
DSAI 35
VRRM = 800-1800 V
IF(RMS) = 80 A
IF(AV)M = 49 A
V
RSM
V
V x(BR)minÿ
V
RRM
VV
900 -
800
1300 - 1200
1300
1700
1900
1300
1750
1950
1200
1600
1800
x Only for Avalanche Diodes
Anode
on stud
DS 35-08A
DS 35-12A
DSA 35-12A
DSA 35-16A
DSA 35-18A
Cathode
on stud
DSI 35-08A
DSI 35-12A
DSAI 35-12A
DSAI 35-16A
DSAI 35-18A
DO-203 AB
C DS
DSA
A
A DSI
DSAI
C
1/4-28UNF
A = Anode C = Cathode
Symbol
IF(RMS)
IF(AVM)
PRSM
I
FSM
I2t
TVJ
TVJM
T
stg
Md
Weight
Test Conditions
TVJ = TVJM
Tcase = 100°C; 180° sine
DSA(I) types, TVJ = TVJM, tp = 10 ms
T
VJ
= 45°C;
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C
V =0
R
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Mounting torque
Maximum Ratings
80 A
49 A
11 kW
650 A
690 A
600 A
640 A
2100
2000
1800
1700
A2s
A2s
A2s
A2s
-40...+180
180
-40...+180
°C
°C
°C
4.5-5.5
40-49
15
Nm
lb.in.
g
Features
q International standard package,
JEDEC DO-203 AB (DO-5)
q Planar glassivated chips
Applications
q High power rectifiers
q Field supply for DC motors
q Power supplies
Advantages
q Space and weight savings
q Simple mounting
q Improved temperature and power
cycling
q Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol
IR
V
F
VT0
rT
RthJC
RthJH
d
S
dA
a
Test Conditions
TVJ = TVJM; VR = VRRM
I
F
=
150
A;
T
VJ
=
25°C
For power-loss calculations only
TVJ = TVJM
DC current
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Characteristic Values
£ 4 mA
£ 1.55
V
0.85 V
4.5 mW
1.05 K/W
1.25 K/W
4.05
3.9
100
mm
mm
m/s2
1-2




IXYS Corporation

DSA35-12A Datasheet Preview

DSA35-12A Datasheet

Rectifier Diode Avalanche Diode

No Preview Available !

DS 35
DSA 35
DSI 35
DSAI 35
250
A
200
IF
150
TVJ= 180°C
TVJ= 25°C
100
typ. lim.
50
0
0.5 1.0 1.5
VF
Fig. 1 Forward characteristics
2.0 V
100
W
80
PF
60
40
DC
180° sin
120°
20 60°
30°
1000
90A0 50Hz, 80% VRRM
800
IFSM700
600
500
TVJ = 45°C
400
300 TVJ = 180°C
200
100
0
10-3 10-2 10-1 s
t
Fig. 2 Surge overload current
IFSM: crest value, t: duration
100
RthJA :
1.5 K/W
1.9 K/W
2.3 K/W
3.9 K/W
10000
80A020s VR = 0 V
6000
I2t
4000
2000
TVJ = 45°C
TVJ = 180°C
1000
1
2 3 4 5 6 7 m8 s910
t
Fig. 3 I2t versus time (1-10 ms)
60
A
50
IF(AV)M
40
30
20
10
0
0 20 40 60 80 A 00 50 100 150 °C 200
IF(AV)M
Tamb
Fig. 4 Power dissipation versus forward current and ambient temperature
2.0
K/W
1.6
ZthJH
1.2
0.8
0
0 40 80 120 160 °C 200
Tcase
Fig. 5 Max. forward current at case
temperature 180° sine
R for various conduction angles d:
thJH
d
DC
180°
120°
60°
30°
RthJH (K/W)
1.25
1.37
1.47
1.74
2.08
0.4
0.0
10-3
10-2
10-1
100
Fig. 6 Transient thermal impedance junction to heatsink
101 s
t
Constants for Z calculation:
thJH
i
1
2
102 3
4
R (K/W)
thi
0.10
0.25
0.70
0.20
t (s)
i
0.0012
0.1181
0.6540
2.0
© 2000 IXYS All rights reserved
2-2


Part Number DSA35-12A
Description Rectifier Diode Avalanche Diode
Maker IXYS Corporation
Total Page 2 Pages
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