T0500ND25E - Insulated Gate Bi-Polar Transistor

IXYS (now Littelfuse)

Datasheet Details

Part number	T0500ND25E
Manufacturer	IXYS (now Littelfuse)
File Size	411.71 KB
Description	Insulated Gate Bi-Polar Transistor
Datasheet	T0500ND25E Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Date:- 16 Aug, 2016 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0500ND25E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range. Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 850nH. MAXIMUM LIMITS 500 1000 500 2.