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SS150TI60110 Datasheet, IXYS

SS150TI60110 diode equivalent, silicon carbide schottky diode.

SS150TI60110 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 187.56KB)

SS150TI60110 Datasheet

Features and benefits

Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device) .

Application

°C °C W MHz Switch Mode Power Supplies High Frequency Converters Resonant Converters Rectifier Circuits Parameter Test.

Image gallery

SS150TI60110 Page 1 SS150TI60110 Page 2 SS150TI60110 Page 3

TAGS

SS150TI60110
Silicon
Carbide
Schottky
Diode
IXYS

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