Part SN35N120AU1
Description High Voltage 1 GBT with Diode
Category Diode
Manufacturer IXYS
Size 99.20 KB
IXYS
SN35N120AU1

Overview

  • 5/13 Nm/. 1.5/13 Nm/. 30 g q International standard package miniBLOC (ISOTOP) compatible Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ Low VCE(sat) - for minimum on-state conduction losses Fast Recovery Epitaxial Diode - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25°C TJ = 125°C 8 750 15 ±100 4 V V mA mA nA