SN35N120AU1 - High Voltage 1 GBT with Diode

Datasheet Summary

Features

q q q q q q Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g q International standard package miniBLOC (ISOTOP) compatible Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ Low VCE(sat) - for minimum on-state conduction losses Fast Recovery Epitaxial Diode - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect Test Conditions Characte.

IXYS

📥 Download Datasheet

Datasheet Details

Part number	SN35N120AU1
Manufacturer	IXYS
File Size	99.20 KB
Description	High Voltage 1 GBT with Diode
Datasheet	SN35N120AU1 Datasheet
Additional preview pages of the SN35N120AU1 datasheet.

📁 Similar Datasheet

SN358 - Dual Operational Amplifier (KODENSHI KOREA)
SN358P - Dual Operational Amplifier (KODENSHI KOREA)
SN3020 - Smart Energy Module (Murata)
SN3112-09 - 9-channel LED control chip (SI-EN)
SN3112-12 - 12-channel LED control chip (SI-EN)
SN317D - Positive Voltage Regulator (AUK)
SN317D2 - Positive Voltage Regulator (AUK)
SN317L - Positive Voltage Regulator (AUK)
SN317LF - Positive Voltage Regulator (AUK)
SN317MD - Positive Voltage Regulator (AUK)

Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text

High Voltage IGBT with Diode IXSN 35N120AU1 VCES IC25 VCE(sat) 3 2 = 1200 V = 70 A = 4V 4 1 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC PD VISOL TJ TJM Tstg Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C 50/60 Hz IISOL £ 1 mA IGBT Diode t = 1 min t=1s Maximum Ratings 1200 1200 ±20 ±30 70 35 140 ICM = 70 @ 0.8 VCES 10 300 175 2500 3000 -55 ... +150 150 -55 ...

Published: Jun 12, 2005 |