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MIXA80W1200TEH - XPT IGBT

Features

  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Six-Pack XPT IGBT Part name (Marking on product) MIXA80W1200TEH MIXA80W1200TEH VCES = 1200 V IC25 = 120 A VCE(sat) = 1.8 V 30, 31, 32 1 19 2 NTC 20 3 4 33, 34, 35 D1 T1 5 6 27 28 29 D2 T2 7 8 D3 T3 9 10 24 25 26 D4 T4 11 12 16, 17, 18 D5 T5 21 22 23 D6 T6 13, 14, 15 E72873 Pin configuration see outlines. Features: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.