MITH200PF1700LP - IGBT

Features

/ Advantages:.
Trench IGBT - low VCE(sat) - easy paralleling due to the positive temperature coefficient of the on-state voltage - Tvjm = 175°C - square RBSOA @ 2x Ic - short circuit rated for 10 μsec. - low gate charge - low EMI.
Free wheeling diode - fast and soft reverse recovery - low operating forward voltage.

MITH200PF1700LP igbt by IXYS - Datasheet Preview

Datasheet Details

Part number	MITH200PF1700LP
Manufacturer	IXYS (now Littelfuse)
File Size	204.18 KB
Description	IGBT
Datasheet	MITH200PF1700LP Datasheet

📁 Similar Datasheet

MIT-4A11 - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
MIT-4A11A - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
MIT-4A11B - SUBMINIATURE PHOTOINTERRUPTER (Unity Opto Technology)
MIT-5A116 - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
MIT-5A116-U - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
MIT-5A117 - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
MIT-5A11B - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
MIT-5A11C - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
MIT-5A11J - SLOTTED PHOTOINTERRUPTER (Unity Opto Technology)
MITX-6932 - Mini-ITX motherboard User Manual (NORCO)

Other Datasheets by IXYS

MITH250PF1700LP - IGBT
MITH450PF1200LP - IGBT
MITA10WB1200TMH - Converter - Brake - Inverter Module
MITA30WB600TMH - Converter - Brake - Inverter Module
MITB10WB1200TMH - Converter - Brake - Inverter Module
MITB15WB1200TMH - Converter - Brake - Inverter Module

Full PDF Text Transcription

Click to expand full text

IGBT Module Phase leg Part number MITH200PF1700LP MITH200PF1700LP tentative VCES IC25 VCE(sat) = 1700 V = 285 A = 1.90 V 76 54 T2 T1 D2 D1 2 1 3 tentative Features / Advantages: • Trench IGBT - low VCE(sat) - easy paralleling due to the positive temperature coefficient of the on-state voltage - Tvjm = 175°C - square RBSOA @ 2x Ic - short circuit rated for 10 μsec.

Published: Oct 1, 2023 |