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IXYS

MCD501-16io2 Datasheet Preview

MCD501-16io2 Datasheet

Thyristor/Diode Modules

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IXYS
Date: 29.09.2014
Data Sheet Issue: 3
Thyristor/Diode Modules M## 501
Absolute Maximum Ratings
VRRM
VDRM
[V]
1200
1400
1600
1800
MCC
501-12io2
501-14io2
501-16io2
501-18io2
MCD
501-12io2
501-14io2
501-16io2
501-18io2
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage 1)
Non-repetitive peak off-state voltage 1)
Repetitive peak reverse voltage 1)
Non-repetitive peak reverse voltage 1)
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(RMS)M
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
Maximum average on-state current, TC = 85°C 2)
Maximum average on-state current. TC = 100°C 2)
Nominal RMS on-state current, TC = 55°C 2)
D.C. on-state current, TC = 55°C
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM 3)
Peak non-repetitive surge tp = 10 ms, VRM 10V 3)
I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM 3)
I2t capacity for fusing tp = 10 ms, VRM 10 V 3)
Critical rate of rise of on-state current (repetitive) 4)
Critical rate of rise of on-state current (non-repetitive) 4)
VRGM
PG(AV)
PGM
VISOL
Tvj op
Tstg
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Isolation Voltage 5)
Operating temperature range
Storage temperature range
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tvj initial.
4) VD = 67% VDRM, IFG = 2 A, tr 0.5µs, TC = 125°C.
5) AC RMS voltage, 50 Hz, 1min test
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3
Page 1 of 10
MDC
501-12io2
501-14io2
501-16io2
501-18io2
MAXIMUM
LIMITS
1200-1800
1300-1900
1200-1800
1300-1900
UNITS
V
V
V
V
MAXIMUM
LIMITS
503
347
1195
985
14.5
16.0
1.05×106
1.28×106
200
400
5
4
30
3000
-40 to +125
-40 to +125
UNITS
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
September, 2014




IXYS

MCD501-16io2 Datasheet Preview

MCD501-16io2 Datasheet

Thyristor/Diode Modules

No Preview Available !

IXYS
Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS 1)
UNITS
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IL Latching current
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered Charge
Qra Recovered Charge, 50% chord
Irm Reverse recovery current
trr Reverse recovery time, 50% chord
-
-
-
-
1000
-
-
-
-
0.25
-
-
-
-
-
-
-
-
tq Turn-off time
-
RthJC Thermal resistance, junction to case
RthCH Thermal resistance, case to heatsink
F1 Mounting force (to heatsink)
F2 Mounting force (to terminals)
Wt Weight
Notes:
1) Unless otherwise indicated Tvj=125°C.
2) Screws must be lubricated.
-
-
-
-
4.25
10.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1350
1150
120
19
-
-
-
-
-
-
-
1.5
1.50 ITM = 1700 A
1.43 ITM = 1500 A
0.85
0.30
- VD = 80% VDRM, linear ramp, Gate o/c
70 Rated VDRM
70 Rated VRRM
2.5
Tvj = 25°C, VD = 12 V, IT = 3 A
250
- 67% VDRM
1000 VD = 12 V, Tvj = 25°C
300 VD = 12 V, Tvj = 25°C
2.0 IFG = 2 A, tr = 1 µs, VD = 40%VDRM,
8.0 ITM = 1500 A, di/dt = 10 A/µs, Tvj = 25°C
1550
- ITM = 1000 A, tp = 1 ms, di/dt = 10A/µs,
- VR = 100 V
-
200
ITM = 1500 A, tp = 1 ms, di/dt = 10 A/µs,
VR = 100 V, VDR = 67%VDRM, dvDR/dt = 50 V/µs
0.062 Single Thyristor
0.031 Whole Module
0.02 Single Thyristor
0.01 Whole Module
5.75
13.8 2)
-
V
V
V
m
V/s
mA
mA
V
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
K/W
Nm
Nm
kg
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 3
Page 2 of 10
September, 2014


Part Number MCD501-16io2
Description Thyristor/Diode Modules
Maker IXYS
Total Page 10 Pages
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