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IXYS

MCD312-16io1 Datasheet Preview

MCD312-16io1 Datasheet

Thyristor / Diode Module

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Thyristor \ Diode Module
Phase leg
Part number
MCD312-16io1
3 1 5 42
MCD312-16io1
VRRM
I TAV
VT
= 2x 1600 V
= 320 A
= 1.06 V
Backside: isolated
Features / Advantages:
International standard package
Direct copper bonded Al2O3-ceramic
with copper base plate
Planar passivated chip
Isolation voltage 3600 V~
Keyed gate/cathode twin pins
Applications:
Motor control, softstarter
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Solid state switches
Package: Y1
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: Copper
internally DCB isolated
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e




IXYS

MCD312-16io1 Datasheet Preview

MCD312-16io1 Datasheet

Thyristor / Diode Module

No Preview Available !

MCD312-16io1
Rectifier
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
average forward current
RMS forward current
VR/D = 1600 V
VR/D = 1600 V
IT = 300 A
I T = 600 A
IT = 300 A
I T = 600 A
TC = 85°C
180° sine
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 140°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 140°C
min.
typ. max. Unit
1700 V
1600 V
1 mA
40 mA
1.12 V
1.32 V
1.06 V
1.29 V
320 A
520 A
threshold voltage
slope resistance
for power loss calculation only
TVJ = 140°C
0.80 V
0.68 m
thermal resistance junction to case
0.12 K/W
thermal resistance case to heatsink
0.040
K/W
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 500 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 140°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 140°C
VR = 0 V
TVJ = 25°C
TC = 140°C
960 W
9.60 kA
10.4 kA
8.16 kA
8.82 kA
460.8 kA²s
447.4 kA²s
332.9 kA²s
323.3 kA²s
438 pF
120 W
60 W
20 W
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
TVJ = 140 °C; f = 50 Hz
repetitive, IT = 960 A
tP = 200 µs; diG /dt = 1 A/µs;
IG = 1 A; V = VDRM
non-repet., IT = 320 A
V = VDRM
TVJ = 140°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 140°C
100 A/µs
500 A/µs
1000 V/µs
2
3
150
220
0.25
10
V
V
mA
mA
V
mA
latching current
holding current
gate controlled delay time
turn-off time
t p = 30 µs
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 1 A; diG/dt = 1 A/µs
VR = 100 V; IT = 300 A; V = VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 50 V/µs tp = 200 µs
200 mA
150 mA
2 µs
200 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e


Part Number MCD312-16io1
Description Thyristor / Diode Module
Maker IXYS
Total Page 6 Pages
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