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IXYT40N120A4HV - Ultra Low-Vsat PT IGBT

Features

  • Optimized for Low Conduction.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYT40N120A4HV VCES = 1200V IC110 = 40A V  1.80V CE(sat) tfi(typ) = 220ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C Plastic Body for 10s Maximum Ratings 1200 V 1200 V ±20 V ±30 V 140 A 40 A 275 A ICM = 80 A  VCE 0.8 • VCES 600 W -55 ... +175 °C 175 °C -55 ...
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