IXYP20N120A4 - IGBT

This page provides the datasheet information for the IXYP20N120A4, a member of the IXYA20N120A4HV IGBT family.

Datasheet Summary

Features

Optimized for Low Conduction Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Packages Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

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Datasheet Details

Part number	IXYP20N120A4
Manufacturer	IXYS
File Size	2.26 MB
Description	IGBT
Datasheet	IXYP20N120A4 Datasheet
Additional preview pages of the IXYP20N120A4 datasheet.

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Full PDF Text Transcription

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1200V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching IXYA20N120A4HV IXYP20N120A4 VCES = 1200V IC110 = 20A VCE(sat)  1.9V tfi(typ) = 160ns Symbol VCES VCGR VGES VGEM IIICCC21M510 SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C 80 20 135 ICM = 40 VCE 0.8 • VCES 375 -55 ... +175 175 -55 ... +175 A A A A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220) Mounting Force (TO-263HV) 1.13/10 10..65 / 22..14.6 Nm/lb.in N/lb TO-263HV TO-220 2.5 g 3.

Published: Jun 2, 2020 |