logo

IXYN82N120C3H1 Datasheet, IXYS

IXYN82N120C3H1 igbt equivalent, high-speed igbt.

IXYN82N120C3H1 Avg. rating / M : 1.0 rating-11

datasheet Download

IXYN82N120C3H1 Datasheet

Features and benefits

z z z z z Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG.

Application

z z z z z VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC 50 μA 3 mA ±100 2.75 3.50 3.20 nA V V z z z = 82A, VGE = 15V,.

Image gallery

IXYN82N120C3H1 Page 1 IXYN82N120C3H1 Page 2 IXYN82N120C3H1 Page 3

TAGS

IXYN82N120C3H1
High-Speed
IGBT
IXYN82N120C3
IXYN80N90C3H1
IXYN100N120B3H1
IXYS

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts