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IXYN82N120C3H1 - High-Speed IGBT

Key Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Isolation Voltage 2500V~.
  • Anti-Parallel Ultra Fast Diode.
  • Positive Thermal Coefficient of Vce(sat).
  • High Current Handling Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXYN82N120C3 High-Speed IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYN82N120C3H1 VCES = 1200V IC110 = 46A V CE(sat)  3.2V tfi(typ) = 93ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 105 A 46 A 42 A 320 A ICM = 164 A  @VCE VCES 500 W -55 ... +150 °C 150 °C -55 ... +150 °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.3/11.5 Nm/lb.in.