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IXYN100N120C3 - High-Speed IGBT

Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Isolation Voltage 2500V~.
  • Positive Thermal Coefficient of Vce(sat).
  • Avalanche Rated.
  • High Current Handling Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYN100N120C3 E VCES = 1200V IC110 = 84A V CE(sat)  3.50V tfi(typ) = 110ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 160 A 84 A 460 A 50 A 1.2 J ICM = 200 A  @VCE VCES 830 W -55 ... +175 °C 175 °C -55 ... +175 °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.3/11.5 Nm/lb.in.
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