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IXYL40N250CV1 - High Voltage IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4500V~ Electrical Isolation.
  • High Voltage Package.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information IXYL40N250CV1 VCES = 2500V IC110 = 40A V CE(sat)  4.0V tfi(typ) = 134ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Force Maximum Ratings 2500 V 2500 V ±20 V ±30 V 80 A 40 A 23 A 380 A ICM = 80 1500 577 -55 ... +175 175 -55 ... +175 300 260 40..120 / 9..
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