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IXYH80N90C3 - IGBT

Download the IXYH80N90C3 datasheet PDF. This datasheet also covers the IXYT80N90C3 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Packages Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXYT80N90C3-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXYH85N120A4 Ultra Low-Vsat PT IGBT
IXYH85N120C4 High Speed Through IGBT
IXYH8N250CHV High Voltage IGBT
IXYH8N250CV1HV High Voltage IGBT
IXYH100N65B3 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XPTTM 900V IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYT80N90C3 IXYH80N90C3 Symbol VCES VCGR VGES VGEM IICLR25MS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TTeC rm=in2a5l°CCur(rCehnitpLCimaiptability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 900 V 900 V ±20 V ±30 V 165 A 160 A 80 A 360 A ICM = 160 @VCE VCES 830 A W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in.
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