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IXYA24N100C4HV - High Speed IGBT

Features

  • Optimized for Low Switching Losses.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Packages Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1000V XPTTM GenX4TM IGBT High Speed IGBT for 20-50kHz Switching Advance Technical Information IXYA24N100C4HV IXYP24N100C4 VCES = 1000V IC110 = 24A V CE(sat)  2.3V tfi(typ) = 40ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1000 V 1000 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 76 A 24 A 132 A VGE = 15V, TVJ = 150°C, RG = 10 ICM = 48 A Clamped Inductive Load  VCE 0.8 • VCES VGE = 15V, VCE = 660V, TJ = 150°C RG = 50, Non Repetitive 8 μs TC = 25°C 375 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.