IXXK160N65C4 - 650V IGBT

IXYS (Littelfuse)

Features

z Optimized for 20-60kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Packages z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement.

IXXK160N65C4 650v igbt by IXYS (Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXXK160N65C4
Manufacturer	IXYS (Littelfuse)
File Size	204.47 KB
Description	650V IGBT
Datasheet	IXXK160N65C4 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by IXYS (Littelfuse)

Part Number	Description
IXXK160N65B4	Extreme Light Punch Through IGBT
IXXK100N60B3H1	600V IGBT
IXXK100N60C3H1	600V IGBT
IXXK110N65B4H1	Extreme Light Punch Through IGBT
IXXK200N60B3	600V IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Preliminary Technical Information XPTTM 650V IGBTs GenX4TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXXK160N65C4 IXXX160N65C4 VCES = IC110 = V ≤ CE(sat) tfi(typ) = 650V 160A 2.1V 30ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V TC= 25°C (Chip Capability) Leads Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive TC = 25°C 290 A 160 A 160 A 800 A ICM = 320 A ≤ @VCE VCES 10 μs 940 W -55 ... +175 °C 175 °C -55 ...