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IXXA30N65C3HV - 650V IGBTs

Features

  • z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Capability z Short Circuit Capability z High Voltage Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM IXXA30N65C3HV Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 650V 30A 2.2V 32ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10Ω Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82Ω, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 650 V 650 V ±20 V ±30 V 52 A 30 A 113 A 20 A 250 mJ ICM = 48 ≤@VCE VCES 10 A μs 230 -55 ... +175 175 -55 ... +175 300 260 2.
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