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IXYS

IXTT50P10 Datasheet Preview

IXTT50P10 Datasheet

Standard Power MOSFET

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Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 50P10
IXTT 50P10
VDSS
ID25
RDS(on)
= -100 Vwww.DataSheet4U.com
= -50 A
= 55 m
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TC = 25°C
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
(TO-247)
(TO-268)
Maximum Ratings
-100
-100
V
V
±20 V
±30 V
-50
-200
-50
A
A
A
30 mJ
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = -250 µA
VDS = VGS, ID = -250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
VGS = -10 V, ID = 0.5 • ID25
-100
-3.0
TJ = 25°C
TJ = 125°C
V
-5.0 V
±100 nA
-25 µA
-1 mA
55 m
TO-247 AD (IXTH)
D (TAB)
TO-268 (IXTT)
GS
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard package
JEDEC TO-247 AD
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
© 2004 IXYS All rights reserved
DS98905D(10/04)




IXYS

IXTT50P10 Datasheet Preview

IXTT50P10 Datasheet

Standard Power MOSFET

No Preview Available !

Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = -10 V; ID = ID25, pulse test
VGS = 0 V, VDS = -25 V, f = 1 MHz
8 16
4200
1720
750
S
pF
pF
pF
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 4.7 (External)
46
39
86
38
ns
ns
ns
ns
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247)
140 nC
36 nC
70 nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0
ISM Repetitive; pulse width limited by TJM
VSD
IPFu=lsIeS,
tVeGsSt,=t
0
V,
300
µs,
duty
cycle
d
2
%
-25
-200
-3
A
A
V
trr IF = IS, di/dt = 100 A/µs, VR = -50 V
180 ns
IXTH 50P10
IXTT 50P10
TO-247 AD Outline
www.DataSheet4U.com
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b
b
1
2
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXTT50P10
Description Standard Power MOSFET
Maker IXYS
Total Page 4 Pages
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