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IXTT20N50D - High Voltage MOSFET

Download the IXTT20N50D datasheet PDF. This datasheet also covers the IXTH20N50D variant, as both devices belong to the same high voltage mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Normally ON Mode.
  • International Standard Packages.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH20N50D_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTT28N50Q Power MOSFET International Rectifier
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IXTT10P50 P-Channel MOSFET IXYS Corporation
IXTT110N10P N-Channel MOSFET IXYS Corporation
IXTT11P50 P-Channel MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTT20P50P Power MOSFET
IXTT240N15X4HV Power MOSFET
IXTT24P20 Standard Power MOSFET
IXTT26N50P Power MOSFET
IXTT26N60P N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage MOSFET N-Channel, Depletion Mode IXTH20N50D IXTT20N50D VDSX = ID25 = ≤RDS(on) 500V 20A 330mΩ TO-268 (IXTT) Symbol VDSX VDGX VGSX VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 500 500 V V ±30 V ±40 V 20 A 50 A 400 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in.