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IXTR48P20P - Power MOSFET

Key Features

  • z 1.6mm (0.062 in. ) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force t = 1min t = 1s 300 260 2500 3000 20..120 / 4.5..27 5 Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated The rugged PolarPTM process Low QG Low Drain-to-Tab capacitance Low package inductance - easy to drive and to protect.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR48P20P VDSS ID25 RDS(on) = = ≤ - 200V - 30A 93mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings - 200 - 200 ±20 ±30 - 30 -144 - 48 2.5 10 190 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ N/lb. g z z z z z Isolated Tab G = Gate S = Source D = Drain Features z 1.6mm (0.062 in.