| Description | Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR16P60P VDSS = ID25 = ≤RDS(on) - 600V - 10A 790mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 600 - 600 ±20 ±30 ... |
| Features |
z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation
z Avalanche rated z The rugged PolarPTM process z Low QG z Low Drain-to-Tab capacitance z Low package inductance
- easy to drive and to protect
Applications
z High side switching z Push-pull amplifiers z DC Choppers ...
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| Datasheet |
 IXTR16P60P Datasheet - 118.45KB |
