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IXTN30N100L - Power MOSFET

Download the IXTN30N100L datasheet PDF. This datasheet also covers the IXTB30N100L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Designed for linear operation.
  • International standard packages.
  • Molding epoxies meet UL 94 V-0 flammability classification.
  • SOT-227B miniBLOC with aluminium nitride isolation Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 μA V = ± 30 V , V = 0 GS DC DS VDS = VDSS, VGS = 0 V TJ = 25°C TJ = 125°C VGS = 20 V, ID = 0.5.
  • ID2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTB30N100L-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power MOSFETs with IXTB 30N100L Extended FBSOA IXTN 30N100L N-Channel Enhancement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A ≤RDS(on) 0.45 Ω Symbol VDSS VDGR V GS VGSM ID25 IDM IAR EAR EAS P D TJ TJM Tstg TL V ISOL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Maximum Ratings IXTB IXTN PLUS264 (IXTB) 1000 1000 V 1000 1000 V ± 30 ± 40 ± 30 ± 40 V V TC = 25°C TC = 25°C, Pulse width limited by T JM TC = 25°C TC = 25°C TC = 25°C T = 25°C C 30 30 70 70 30 30 80 80 2.0 2.0 800 800 -55 ... +150 150 -55 ... +150 AG A D S (TAB) A miniBLOC, SOT-227 B (IXTN) mJ E153432 S J DG W °C G °C S °C S D S 1.6 mm (0.
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