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IXYS

IXTK33N50 Datasheet Preview

IXTK33N50 Datasheet

N-Channel MOSFET

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High Current
MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 33N50
VDSS = 500 V
ID (cont) = 33 A
RDS(on) = 0.17
Preliminary data
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
PD TC = 25°C
T
J
TJM
T
stg
Md Mounting torque
Weight
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
V
DSS
V = 0 V, I = 5 mA
GS D
BVDSS temperature coefficient
V
GS(th)
V
DS
=
VGS,
I
D
=
250
µA
V temperature coefficient
GS(th)
IGSS VGS = ±20 V DC, VDS = 0
I
DSS
V = 0.8 V
DS DSS
VGS = 0 V
T = 25°C
J
TJ = 125°C
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
Maximum ratings
500 V
500 V
±20 V
±30 V
33 A
132 A
416 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
300 °C
Characteristic Values
Min. Typ. Max.
500
0.087
V
%/K
2.0 4.0 V
-0.25
%/K
±100 nA
200 µA
3 mA
0.17
TO-264 AA
G
D
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell
structure
• International standard package
• Fast switching times
Applications
• Motor controls
• DC choppers
• Uninterruptable Power Supplies
(UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95513C (4/97)
1-4




IXYS

IXTK33N50 Datasheet Preview

IXTK33N50 Datasheet

N-Channel MOSFET

No Preview Available !

IXTK 33N50
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic values
Min. Typ. Max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test
24 S
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
4900
690
300
pF
pF
pF
t
d(on)
t
r
td(off)
tf
V = 10 V, V = 0.5 V , I = 0.5 I
GS
DS
DSS D
D25
RG = 1 (External)
53
30
140
40
ns
ns
ns
ns
Qg(on)
Q
gs
Q
gd
250 nC
V = 10 V, V = 0.5 V , I = 0.5 I
GS
DS
DSS D
D25
30 nC
115 nC
RthJC
RthCK
0.30 K/W
0.15 K/W
Source-Drain Diode
Symbol Test Conditions
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
I V =0V
S GS
I Repetitive; pulse width limited by T
SM JM
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
33 A
132 A
1.5 V
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V
850 ns
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4


Part Number IXTK33N50
Description N-Channel MOSFET
Maker IXYS
PDF Download

IXTK33N50 Datasheet PDF






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