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High Current MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 33N50
VDSS = 500 V
ID (cont) = 33 A RDS(on) = 0.17 Ω
Preliminary data
Symbol Test conditions
VDSS VDGR
VGS VGSM
ID25 IDM
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
PD
TC = 25°C
T J
TJM T
stg
Md
Mounting torque
Weight
Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions (TJ = 25°C unless otherwise specified)
V DSS
V = 0 V, I = 5 mA
GS
D
BVDSS temperature coefficient
V GS(th)
V DS
=
VGS,
I
D
=
250
µA
V temperature coefficient GS(th)
IGSS
VGS = ±20 V DC, VDS = 0
I
V = 0.8 V
DSS
DS
DSS
VGS = 0 V
T = 25°C J
TJ = 125°C
R DS(on)
V = 10 V, I = 0.
IXTK33N50 Datasheet
