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IXTH34N65X2 - Power MOSFET

Download the IXTH34N65X2 datasheet PDF. This datasheet also covers the IXTA34N65X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low R and Q DS(ON) G.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA34N65X2-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH34N65X2 N-Channel MOSFET INCHANGE
IXTH340N04T4 N-Channel MOSFET INCHANGE
IXTH300N04T2 N-Channel MOSFET INCHANGE
IXTH30N50 Power MOSFET IXYS Corporation
IXTH30N50 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTH340N04T4 Power MOSFET
IXTH300N04T2 Power MOSFET
IXTH30N45 N-Channel MOSFET
IXTH30N50L Power MOSFET
IXTH30N50L2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP34N65X2 IXTH34N65X2 VDSS = ID25 =  RDS(on) 650V 34A 96m TO-220 (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-247 Maximum Ratings 650 V 650 V 30 V 40 V 34 A 68 A 17 A 1 J 15 V/ns 540 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.
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