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PolarPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P
TO-263 AA (IXTA)
TO-220AB (IXTP)
VDSS =
ID25 = ≤ RDS(on)
- 200V - 26A
170mΩ
TO-3P (IXTQ)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
G S
D (Tab)
G DS
D (Tab)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
- 200
V
- 200
V
±20
V
±30
V
TC = 25°C TC = 25°C, Pulse Width Limited by TJM
TC = 25°C TC = 25°C
- 26
A
- 70
A
- 26
A
1.5
J
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
10
300
- 55 ... +150 150
- 55 ... +150
V/ns
W
°C °C °C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s
300
°C
260
°C
Mounting Torque (TO-3P,TO-220 &TO-247)
1.13/10
Nm/lb.in.
IXTH26P20P Datasheet
