| Description | Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EEAARS PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TTCC = 25°C = 25°C TC = 25°C Mounting torque Maximum lead... |
| Features |
z International standard package JEDEC TO-247 AD
z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 µA
1200 3
VGS = ±30 VDC, VDS...
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| Datasheet |
 IXTH12N120 Datasheet - 541.56KB |
