Download the IXTA4N65X2 datasheet PDF.
This datasheet also covers the IXTY4N65X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Features
- International Standard Packages.
- Low RDS(ON) and QG.
- Avalanche Rated.
- Low Package Inductance
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5.
- ID25, Note 1
Characteristic Values
Min. Typ. Max. 650 V
3.0 5.0 V
100 nA
5 A 100 A
850 m
Advantages.
- High Power De.