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IXTA26P20P - Power MOSFET

Download the IXTA26P20P datasheet PDF. This datasheet also covers the IXTH26P20P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Avalanche Rated z Rugged PolarPTM Process z Low Package Inductance z Fast Intrinsic Diode Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH26P20P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤ RDS(on) - 200V - 26A 170mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight G S D (Tab) G DS D (Tab) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 V - 200 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C - 26 A - 70 A - 26 A 1.5 J IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 10 300 - 55 ... +150 150 - 55 ... +150 V/ns W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 300 °C 260 °C Mounting Torque (TO-3P,TO-220 &TO-247) 1.13/10 Nm/lb.in.