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IXTA160N085T - Power MOSFET

Download the IXTA160N085T datasheet PDF. This datasheet also covers the IXTQ160N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99347(02/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Q g(on) Qgs Q gd RthJC RthCK IXTA 160N085T IXTP 160N085T IXTQ 160N085T Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 50A, pulse test DS D.

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Note: The manufacturer provides a single datasheet file (IXTQ160N085T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA160N04T2 Power MOSFET
IXTA16N50P PolarHV Power MOSFET
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IXTA102N15T Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS V DGR VGSM ID25 IDRMS IDM IAR E AS dv/dt PD TJ TJM Tstg TL M d Weight TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 85 V 85 V ±20 V 160 A 75 A 350 A 75 A 1.0 J 3 V/ns 360 -55 ... +175 175 -55 ...