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IXKC23N60C5 - Power MOSFET

Key Features

  • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF).
  • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness.
  • Enhanced total power density.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXKC25N80C Power MOSFET
IXKC15N60C5 Power MOSFET
IXKC19N60C5 Power MOSFET
IXKH20N60C5 Power MOSFET
IXKH24N60C5 CoolMOS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXKC 23N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge Preliminary data D G S ID25 = 23 A VDSS = 600 V R = DS(on) max 0.1 Ω ISOPLUS220TM G D S E72873  isolated back surface MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V 23 A 16 A 800 mJ 1.2 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = 18 A VDS = VGS; ID = 1.