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IXKC23N60C5 - Power MOSFET

IXYS

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Datasheet Details

Part number	IXKC23N60C5
Manufacturer	IXYS
File Size	303.84 KB
Description	Power MOSFET
Datasheet	IXKC23N60C5-IXYS.pdf

IXKC23N60C5 Product details

Features

Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF).
Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness.
Enhanced total power density.

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Published: Nov 2, 2020 |