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IXYS

IXGX32N170AH1 Datasheet Preview

IXGX32N170AH1 Datasheet

High Voltage IGBT with Diode

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High Voltage
IGBT with Diode
Advance Technical Information
IXGX 32N170AH1
VCES
IC25
VCE(sat)
tfi(typ)
www.DataSheet4U.com
= 1700 V
= 32 A
= 5.0 V
= 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
IC25
IC90
IF90
ICM
SSOA
(RBSOA)
tSC
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
1700
1700
±20
±30
TC = 25°C
TC = 90°C
32
21
55
TC = 25°C, 1 ms
110
VGE = 15 V, TVJ = 125°C, RG = 5
Clamped inductive load
ICM = 70
@ 0.8 VCES
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10
10
V
V
V
V
A
A
A
A
A
µs
PC TC = 25°C
TJ
TJM
Tstg
350
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
FC Mounting force
22...130/5...30 N/lb
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
300
6
°C
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 1mA, VGE = 0 V
IC = 250 µA, VCE = VGE
1700
3.0
V
5.0 V
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
Note 1 TJ = 125°C
600 µA
10 mA
VCE = 0 V, VGE = ±20 V
±100 nA
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
4.0 5.0 V
4.8 V
PLUS247 (IXGX)
G
C
E
G = Gate,
E = Emitter,
(TAB)
C = Collector,
TAB = Collector
Features
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
© 2004 IXYS All rights reserved
DS99070A(10/04)




IXYS

IXGX32N170AH1 Datasheet Preview

IXGX32N170AH1 Datasheet

High Voltage IGBT with Diode

No Preview Available !

IXGX 32N170AH1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC25; VCE = 10 V
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
16 23
3500
310
40
S
pF
pF
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
155 nC
30 nC
51 nC
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
46 ns
57 ns
260 500 ns
50 100 ns
2.5 4.2 mJ
www.DataSheet4U.com
PLUS247 Outline (IXGX)
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
RG = 2.7 Ω, VCE = 0.5 VCES
48 ns
59 ns
4.0 mJ
300 ns
70 ns
3.0 mJ
0.35 K/W
0.15
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 60A, VGE = 0 V, Pulse test,
t 300 µs, duty cycle d 2 %
2.4 2.7 V
TJ = 125°C 2.4
V
IF = 60A, VGE = 0 V, -diF/dt = 600 A/µs
VR = 1200 V
TJ = 125°C
50
55
150
A
A
ns
TJ = 125°C 350
ns
0.35 K/W
Notes: 1.
2.
3.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t 300 µs, duty cycle 2 %
See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXGX32N170AH1
Description High Voltage IGBT with Diode
Maker IXYS
Total Page 2 Pages
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